Plasma, Systems, sources, coating, DLC

<body> <a href="index_deu.html">deutsche Seite</a><p> <b> Indidual problems need individual solutions:</b> </p> <p> <b>coating, gluing, painting, wetting, sealing or refining of critical materials</b><br> - just to mention a few problems of modern industrial manufacturing. If you face those problems too, plasma technology might be the solution. Use the advantages of plasma technology and our experience to find your custom tailored solution!. </p> <p> Everytime surfaces need to be: <br> <b><li> coated with thin films </b></li> <br> <b> <li>activated</li> </b> <br> <b> <li>etched</li> </b> <br> <b><li> cleaned </li></b> <br> <b><li>sterilized</li> </b> <br> </p> <p> plasma should be used to improve the results dramatically. JE PlasmaConsult offers you the complete range of plasma technology - from consulting, process development to industrial systems - either atmospheric or low pressure. Experience today where plasma can help to solve your problems! </p> <p> <b> etching</b> <br> Plasma etching is an etching technology used in microfabrication. It uses chemically reactive plasmas to remove material deposited on surfaces such as silicon wafers. The plasma is generated under low pressure (vacuum) and in addition with certian etching gases. Sources can either be high frequency or microwave based. High energy ions or chemically active radical species, created with the help of the plasma, attac the surface and react with it. JE PlasmaConsult GmbH offers for plasma etching single sources as well as complete systems and diagnostic equipment for industrial and R&D applications. </p> <p> <b> Coating</b><br> Plasma Coating allows to manipulate the properties of surfaces of many materials precisely. A huge variety of industrial appliactions would not be possible without plasma enhanced thin film coatings. In addition to functional coatings, materials can also be treated with the help of plasma technology to meet aesthetic or decorative requirements (decorative coatings). JE PlasmaConsult GmbH offers single <b> </b>, complete <b>sputter- and PECVD systems</b> for plasma coating and <b>diagnostic equipment</b> for industrial and R&D applications, as well as <b>job coating.</b> </p> <p> <b>Cleaning and sterilization</b><br> When common methods of cleaning and sterilization are not working, plasmatechnology can help. Especially, if thermal sensitve devices or parts are involved, plasma will often be the only solution to clean the surface from residues. Also for this application JE PlasmaConsult offers a broad spectra of products, starting from complete systems for sterilization for industrial usage, single <b>plasma sources, plasma diagnostics and accesories </p> <p> <b> activation</b><br> Surfaces of plastic materials are often very hydrophobic. Today, materials need to be treated with chemically reactive primers before printing and glueing. These primers are often very toxic. Plasma can be the solution to make these primers dispensable in the future. Plasma activates the surface with the help of atomic oxygen and turns it into an hydrophobic surface. JE PlasmaConsult GmbH offers single plasma sources, complete plasma systems for plasma activation and diagnostic equipment for industrial and R&D applications </p> <p> Zur Sitemap <li> <a </a href="sitemap.htm">JE PlasmaConsult </li> </a> <a href="sitemap.htm" </a> </p> <p> Product Portfolio:</p> <table border="0" cellpadding="0" cellspacing="0" style="border-collapse: collapse" bordercolor="#111111" width="100%"> <tr> <td width="50%">Plasma systems</td> <td width="50%">Plasma sources</td> </tr> <tr> <td width="50%"><b><font color="#111111" size="2" face="Arial"> <span class="ueberschrift">PlasCon HCD</span></font></b><p><font color="#111111" size="2" face="Arial"> <span class="ueberschrift">13.56 MHz hollow cathode plasma system</span></font></p> <p><font face="Arial"><b> <span class="highlight"><font size="2">Applications:</font></span><font size="2"> </font></b></font></p> <ul type="disc"> <li><font face="Arial"><span class="text"><font size="2">plasma-enhanced chemical vapor deposition (PE-CVD)</font></span><font size="2"> </font></font> </li> <li><font face="Arial"><span class="text"><font size="2">plasma polymerisation</font></span><font size="2"> </font></font> </li> <li><font face="Arial"><span class="text"><font size="2">surface modification</font></span><font size="2"> </font></font> </li> <li><font face="Arial"><span class="text"><font size="2">plasma cleaning</font></span><font size="2"> </font></font> </li> <li><font face="Arial"><span class="text"><font size="2">plasma etching</font></span><font size="2"> </font></font> </li> <li><font face="Arial"><span class="text"><font size="2">reactive and non-reactive ion etching</font></span><font size="2"> </font></font> </li> <li><font face="Arial"><span class="text"><font size="2">material science (in general)</font></span><font size="2"> </font></font> </li> </ul> <p> </p> <p><span class="highlight"><b><font face="Arial" size="2">features</font></b></span><b><span class="highlight"><font size="2" face="Arial">:</font></span></b></p> <ul> <li><font face="Arial"><span class="text"><font size="2">planar HCD plasma source (similar to HCD-P 100) producing high plasma and radical densities. 48 plasma jets arranged in a hexagonal matrix of 15 cm in diameter,</font></span><font size="2"> </font></font> </li> <li><font face="Arial"><span class="text"><font size="2">HCD plasma source with proprietary compact gas distribution system (primary gas, monomer) featuring fractal geometry gas channels,</font></span><font size="2"> </font></font> </li> <li><font face="Arial" size="2">rf biased, water cooled substrate holder to accomodate wafers of up to 5" diameter, to control the ion energy (resistively heated susbtrate holder is available optionally),</font></li> <li><font face="Arial" size="2">vacuum chamber design and gas distribution system of the HCD plasma source optimized via </font><font face="Arial"><span class="text"><font size="2">computational flow dynamics (CFD) simulation,</font></span><font size="2"> </font></font> </li> <li><font face="Arial"><span class="text"><font size="2">synchronized rf-power coupling to the planar HCD plasma source and substrate holder for better process stability and control,</font></span><font size="2"> </font></font> </li> <li><font face="Arial"><span class="text"><font size="2">time-modulated power coupling for a more selective plasma chemistry and plasma particle energy control.</font></span><font size="2"><br> </font></font> <font size="2" face="Arial"><br>  </font></li> </ul> <p><font face="Arial"><b><span class="highlight"><font size="2">Other important technical features of PlasCon HCD are :</font></span></b><font size="2"><br> </font></font> <ul type="disc"> <li><font face="Arial" size="2">substrate holder can be moved vertically (chamber vented) for easy loading and unloading by motorized stage</font></li> <li><font face="Arial"><span class="text"><font size="2">vacuum system consisting of 250 m3/h roots blower with rotary backing pump, DN 63 ISO-K pumping port, special pumping ring geometry for an azimuthally homogeneous gas flow,</font></span><font size="2"> </font></font> </li> <li><font face="Arial"><span class="text"><font size="2">4 flow controllers (optionally up to 8), throttle valve and Baratron vacuum gauge for independent pressure and flow control,</font></span><font size="2"> </font></font> </li> <li><font face="Arial"><span class="text"><font size="2">all chamber, plasma source and substrate holder parts in contact with the plasma are made of aluminum.</font></span><font size="2"> </font> </font> </li> <li><font face="Arial" size="2">vacuum chamber is equipped with five DN 40 KF vacuum ports for easy diagnostic access. </font> </li> <li><font face="Arial"><span class="highlight"><font size="2">Distance plasma source - substrate holder :</font></span><font size="2"> <span class="text">6 cm (standard), this distance can be increased by adding distance rings of differernt heights</span></font></font></li> </ul> <p> <span class="text"><font face="Arial" size="2">A</font></span><font face="Arial"><span class="text"><font size="2">ll chamber, plasma source and substrate holder parts in contact with the plasma are made of aluminum, which has good thermal conductivity. Furthermore, aluminum has a rather low surface loss rate of excited species and raicals. The source can be operated isothermically by adjusting the cooling water temperature. </font></span> </font> </p> <p> </p> <p><span class="highlight"><u><b> <font face="Arial" size="2" color="#111111">Technical data:</font></b></u></span></p> <p><font class="text" face="Arial" size="2" color="#111111"><b>HCD Plasma source </b>and  <b>RF biasable substrate holder</b></font></p> <p><font face="Arial" size="2" color="#111111"><b>Frequency:      </b> 13.56 MHz</font></p> <p><font face="Arial" size="2" color="#111111"><b>RF-power (max): </b>700 W (HCD) </font></p> <p><font face="Arial" size="2" color="#111111">                          500 W (substrate holder))</font></p> <p><b><font face="Arial" size="2" color="#111111">Matching</font></b><font size="2" face="Arial" color="#111111"><b>: </b>          automatic</font></p> <p><font face="Arial" size="2" color="#111111"><b>Pressure range:</b>  0.05 - 10 mbar</font></p> <p><b><font face="Arial" size="2" color="#111111">G</font></b><font face="Arial" size="2" color="#111111"><b>ases</b>:                process gas,  monomer gas</font></p> <p><b><font face="Arial" size="2" color="#111111">Gas flow rates</font></b><font face="Arial" size="2" color="#111111">:    > 500 sccm, depending on pumping system</font></p> <p><font color="#111111"><b><font size="2" face="Arial">Plasma density    </font> </b><font face="Arial" size="2">5 x 10<sup>11</sup> cm<sup>-3 </sup>(Ar, 1 mbar) </font></font></p> <p align="left"><font face="Arial" size="2" color="#111111"><b>Temperature control</b>: water cooled or controlled by thermo-controller</font></p> <p> </td> <td width="50%"> <p><b><font size="2" color="#111111" face="Arial">ICP-P 200</font></b></p> <p><font color="#111111" face="Arial" size="2">13.56 MHz RF inductively coupled plasma source</font></p> <p class="MsoNormal" style="margin-bottom:6.0pt"><b> <span lang="EN-US" style="font-family: Arial"><font size="2">Features</font></span></b></p> <p class="MsoNormal" style="text-indent: -14.2pt; margin-left: 14.2pt; margin-right: 0cm; margin-top: 0cm; margin-bottom: 6.0pt"> <font size="2"><span lang="EN-US" style="font-family: Symbol">·</span></font><span style="font-style: normal; font-variant: normal; font-weight: normal; font-family: Times New Roman" lang="EN-US"><font size="2">      </font></span><span lang="EN-US" style="font-family: Arial"><font size="2"> planar coil with 200 mm diameter</font></span></p> <p class="MsoNormal" style="text-indent: -14.2pt; margin-left: 14.2pt; margin-right: 0cm; margin-top: 0cm; margin-bottom: 6.0pt"> <font size="2"><span lang="EN-US" style="font-family: Symbol">·</span></font><span style="font-style: normal; font-variant: normal; font-weight: normal; font-family: Times New Roman" lang="EN-US"><font size="2">      </font></span><span lang="EN-US" style="font-family: Arial"><font size="2"> extended power range</font></span></p> <p class="MsoNormal" style="text-indent: -14.2pt; margin-left: 14.2pt; margin-right: 0cm; margin-top: 0cm; margin-bottom: 6.0pt"> <font size="2"><span lang="EN-US" style="font-family: Symbol">·</span></font><span style="font-style: normal; font-variant: normal; font-weight: normal; font-family: Times New Roman" lang="EN-US"><font size="2">      </font></span><span lang="EN-US" style="font-family: Arial"><font size="2"> low ion energy with narrow energy spread </font></span></p> <p class="MsoNormal" style="text-indent: -14.2pt; margin-left: 14.2pt; margin-right: 0cm; margin-top: 0cm; margin-bottom: 6.0pt"> <font size="2"><span lang="EN-US" style="font-family: Symbol">·</span></font><span style="font-style: normal; font-variant: normal; font-weight: normal; font-family: Times New Roman" lang="EN-US"><font size="2">      </font></span><span lang="EN-US" style="font-family: Arial"><font size="2"> high plasma and radical densities </font></span></p> <p class="MsoNormal" style="text-indent: -14.2pt; margin-left: 14.2pt; margin-right: 0cm; margin-top: 0cm; margin-bottom: 6.0pt"> <font size="2"><span lang="EN-US" style="font-family: Symbol">·</span></font><span style="font-style: normal; font-variant: normal; font-weight: normal; font-family: Times New Roman" lang="EN-US"><font size="2">      </font></span><span lang="EN-US" style="font-family: Arial"><font size="2"> compatible with chemically reactive and non reactive gases</font></span></p> <p class="MsoNormal" style="text-indent: -14.2pt; margin-left: 14.2pt; margin-right: 0cm; margin-top: 0cm; margin-bottom: 6.0pt"> <font size="2"><span lang="EN-US" style="font-family: Symbol">·</span></font><span style="font-style: normal; font-variant: normal; font-weight: normal; font-family: Times New Roman" lang="EN-US"><font size="2">      </font></span><span lang="EN-US" style="font-family: Arial"><font size="2"> cw and pulsed operation</font></span></p> <p class="MsoNormal" style="text-indent: -14.2pt; margin-left: 14.2pt; margin-right: 0cm; margin-top: 0cm; margin-bottom: 6.0pt"> <font size="2"><span lang="EN-US" style="font-family: Symbol">·</span></font><span style="font-style: normal; font-variant: normal; font-weight: normal; font-family: Times New Roman" lang="EN-US"><font size="2">      </font></span><span lang="EN-US" style="font-family: Arial"><font size="2"> low contamination</font></span></p> <p class="MsoNormal" style="text-indent: -14.2pt; margin-left: 14.2pt; margin-right: 0cm; margin-top: 0cm; margin-bottom: 6.0pt"> </p> <p class="MsoNormal" style="margin-bottom:6.0pt"><b> <span lang="EN-US" style="font-family: Arial"><font size="2">Applications</font></span></b></p> <p class="MsoNormal" style="text-indent: -14.2pt; margin-left: 14.2pt; margin-right: 0cm; margin-top: 0cm; margin-bottom: 6.0pt"> <font size="2"><span lang="EN-US" style="font-family: Symbol">·</span></font><span style="font-style: normal; font-variant: normal; font-weight: normal; font-family: Times New Roman" lang="EN-US"><font size="2">      </font></span><span lang="EN-US" style="font-family: Arial"><font size="2"> plasma enhanced chemical vapor deposition (PE-CVD) </font></span></p> <p class="MsoNormal" style="text-indent: -14.2pt; margin-left: 14.2pt; margin-right: 0cm; margin-top: 0cm; margin-bottom: 6.0pt"> <font size="2"><span lang="EN-US" style="font-family: Symbol">·</span></font><span style="font-style: normal; font-variant: normal; font-weight: normal; font-family: Times New Roman" lang="EN-US"><font size="2">      </font></span><span lang="EN-US" style="font-family: Arial"><font size="2"> surface modification </font></span></p> <p class="MsoNormal" style="text-indent: -14.2pt; margin-left: 14.2pt; margin-right: 0cm; margin-top: 0cm; margin-bottom: 6.0pt"> <font size="2"><span lang="EN-US" style="font-family: Symbol">·</span></font><span style="font-style: normal; font-variant: normal; font-weight: normal; font-family: Times New Roman" lang="EN-US"><font size="2">      </font></span><span lang="EN-US" style="font-family: Arial"><font size="2"> plasma cleaning</font></span></p> <p class="MsoNormal" style="text-indent: -14.2pt; margin-left: 14.2pt; margin-right: 0cm; margin-top: 0cm; margin-bottom: 6.0pt"> <font size="2"><span lang="EN-US" style="font-family: Symbol">·</span></font><span style="font-style: normal; font-variant: normal; font-weight: normal; font-family: Times New Roman" lang="EN-US"><font size="2">      </font></span><span lang="EN-US" style="font-family: Arial"><font size="2"> plasma etching</font></span></p> <p class="MsoNormal" style="text-indent: -14.2pt; margin-left: 14.2pt; margin-right: 0cm; margin-top: 0cm; margin-bottom: 6.0pt"> <font size="2"><span lang="EN-US" style="font-family: Symbol">·</span></font><span style="font-style: normal; font-variant: normal; font-weight: normal; font-family: Times New Roman" lang="EN-US"><font size="2">      </font></span><font size="2"><span lang="EN-US" style="font-family: Arial"> reactive and non reactive ion e</span></font><span lang="EN-US" style="font-family: Arial"><font size="2">tching</font></span></p> <p class="MsoNormal" style="text-indent: -14.2pt; margin-left: 14.2pt; margin-right: 0cm; margin-top: 0cm; margin-bottom: 6.0pt"> <font size="2"><span lang="EN-US" style="font-family: Symbol">·</span></font><span style="font-style: normal; font-variant: normal; font-weight: normal; font-family: Times New Roman" lang="EN-US"><font size="2">      </font></span><span lang="EN-US" style="font-family: Arial"><font size="2"> material science (in general)</font></span></p> <p>  </p> <h5 style="margin-bottom:6.0pt"><span lang="EN-US"><font size="2">General </font></span></h5> <p class="MsoBodyText" style="text-align:justify"><font face="Arial"> <span lang="EN-US" style="font-size:10.0pt">Plasma-based materials processing including applications in semiconductor and micro system technology often require high densities (> 10<sup>11</sup> cm<sup>-3</sup>) of electrically charged (ions, electrons) and uncharged particles such as excited species and radicals. Additionally, a good plasma uniformity over larger diameters (</span></font><span lang="EN-US" style="font-size: 10.0pt; font-family: Arial">³</span><font face="Arial"><span lang="EN-US" style="font-size:10.0pt"> 200 mm) is required. In certain applications one is also interested in low ion energies (< 20 eV) in order to avoid substrate damage.  </span></font> </p> <p class="MsoBodyText" style="text-align:justify"><font face="Arial"> <span lang="EN-US" style="font-size:10.0pt">A promising and relatively simple method to produce such plasmas is an inductively coupled plasma (ICP) consisting of a planar, multi-turn spiral coil antenna, coupling an rf (13.56 MHz) field through a dielectric window (quartz) into the plasma chamber. However, the up-scaling of a conventional ICP source using one multi-turn spiral coil has limitations due to the increase of the inductance with antenna diameter. The large inductance causes a large voltage drop between the ends of the antenna and unstable impedance matching. Additionally, the large voltage increases the capacitive coupling of the antenna to the plasma causing a low-efficiency non-uniform plasma production. </span></font></p> <p class="MsoBodyText" style="text-align:justify"><font face="Arial"> <span lang="EN-US" style="font-size:10.0pt">The antenna coil system of the ICP-P 200 is designed to overcome the large induction problem. Firstly, a novel four-antenna, low inductance (0.54 </span></font> <span lang="EN-US" style="font-size: 10.0pt; font-family: Arial">m</span><font face="Arial"><span lang="EN-US" style="font-size:10.0pt">H) spiral coil is used that allows operation at lower rf voltage, since the coils are electrically parallel to each other. Secondly, the antenna housing that consist of a stainless steel cylinder and a quartz window is equipped with an eddy current shielding, thus reducing the resistive losses of the system. A uniform plasma at high density is produced without relying upon external magnetic coils. </span></font></p> <p class="MsoBodyText" style="text-align:justify"><font face="Arial"> <span lang="EN-US" style="font-size:10.0pt">Time-modulated power coupling, which can be extremely beneficial to a variety of plasma-induced etching and deposition processes, can be performed with the ICP P 200 as well. Because of the low antenna impedance, the capacitive coupling between antenna and plasma is reduced and the transition between the dim capacitive discharge mode (so called “E mode”) and the bright inductive mode (so called “H mode”) occurs already at very low coil input powers even without a Faraday shield.   </span></font></p> <p> </p> <p><span class="highlight"><u><b> <font face="Arial" size="2" color="#111111">Technical data</font></b></u></span></p> <p style="margin-top: 0"><font color="#111111" face="Arial" size="2"><b> RF-power</b>:            3 - 1200 W (cw), </font></p> <p style="margin-top: 0"><font face="Arial" size="2" color="#111111">                            in pulsed mode higher peak power is possible</font></p> <p><b><font face="Arial" size="2" color="#111111">Frequency</font></b><font color="#111111" face="Arial" size="2"><b>          </b>  13.56 MHz</font></p> <p><font color="#111111" face="Arial" size="2"><b>Pressure range:</b>    0.25...100 Pa</font></p> <p style="margin-bottom: 0"><b><font face="Arial" size="2" color="#111111"> Flange size   </font></b><font color="#111111" face="Arial" size="2"><b>:</b>       DN 250 ISO-K or larger, CF flange optionally </font></p> <p style="margin-bottom: 0"><font color="#111111" face="Arial" size="2"><b> Gas flow rate</b>:       depends on the plasma process</font></p> <p style="margin-bottom: 0"><font color="#111111" face="Arial" size="2">                             e.g.. 1- 50 sccm argon, 1 - 20 sccm oxygen</font></p>  </td> </tr> <tr> <td width="50%"><b><font color="#111111" size="2" face="Arial">ICP- PECVD</font></b><font color="#111111" face="Arial"> </font> <p class="MsoNormal" style="margin-bottom:12.0pt"><b> <span lang="EN-US" style="font-family: Arial"><font size="2">Features</font></span></b></p> <p class="MsoNormal" style="text-indent: -14.2pt; margin-left: 14.2pt; margin-right: 0cm; margin-top: 0cm; margin-bottom: 6.0pt"> <font size="2"><span lang="EN-US" style="font-family: Symbol">·</span></font><span style="font-style: normal; font-variant: normal; font-weight: normal; font-family: Times New Roman" lang="EN-US"><font size="2">      </font></span><span lang="EN-US" style="font-family: Arial"><font size="2"> ICP plasma source with high plasma and radical densities</font></span></p> <p class="MsoNormal" style="text-indent: -14.2pt; margin-left: 14.2pt; margin-right: 0cm; margin-top: 0cm; margin-bottom: 6.0pt"> <font size="2"><span lang="EN-US" style="font-family: Symbol">·</span></font><span style="font-style: normal; font-variant: normal; font-weight: normal; font-family: Times New Roman" lang="EN-US"><font size="2">      </font></span><span lang="EN-US" style="font-family: Arial"><font size="2"> Excellent thickness uniformity</font></span></p> <p class="MsoNormal" style="text-indent: -14.2pt; margin-left: 14.2pt"> <font size="2"><span lang="EN-US" style="font-family: Symbol">·</span></font><span style="font-style: normal; font-variant: normal; font-weight: normal; font-family: Times New Roman" lang="EN-US"><font size="2">      </font></span><span lang="EN-US" style="font-family: Arial"><font size="2"> Compatible with chemically reactive and non reactive gases</font></span></p> <p class="MsoNormal" style="text-indent: -14.2pt; margin-left: 14.2pt"> <font size="2"><span lang="EN-US" style="font-family: Symbol">·</span></font><span style="font-style: normal; font-variant: normal; font-weight: normal; font-family: Times New Roman" lang="EN-US"><font size="2">     </font></span><span lang="EN-US" style="font-family: Arial"><font size="2"> Low electron temperature</font></span></p> <p class="MsoNormal" style="text-indent: -14.2pt; margin-left: 14.2pt"> <font size="2"><span lang="EN-US" style="font-family: Symbol">·</span></font><span style="font-style: normal; font-variant: normal; font-weight: normal; font-family: Times New Roman" lang="EN-US"><font size="2">     </font></span><span lang="EN-US" style="font-family: Arial"><font size="2"> Custom design on request</font></span></p> <p> </p> <p class="MsoNormal" style="margin-bottom:12.0pt"><b> <span lang="EN-US" style="font-family: Arial"><font size="2">Applications</font></span></b></p> <p class="MsoNormal" style="text-indent: -14.2pt; margin-left: 14.2pt; margin-right: 0cm; margin-top: 0cm; margin-bottom: 6.0pt"> <span lang="EN-US" style="font-family: Symbol"><font size="2">·</font></span><span style="font-style: normal; font-variant: normal; font-weight: normal; font-family: Times New Roman" lang="EN-US"><font size="2">      </font></span><span lang="EN-US" style="font-family: Arial"><font size="2"> Scratch resistant transparent coatings</font></span></p> <p class="MsoNormal" style="text-indent: -14.2pt; margin-left: 14.2pt; margin-right: 0cm; margin-top: 0cm; margin-bottom: 6.0pt"> <span lang="EN-US" style="font-family: Symbol"><font size="2">·</font></span><span style="font-style: normal; font-variant: normal; font-weight: normal; font-family: Times New Roman" lang="EN-US"><font size="2">      </font></span><span lang="EN-US" style="font-family: Arial"><font size="2"> Photosensitive and electronically active layers</font></span></p> <p class="MsoNormal" style="text-indent: -14.2pt; margin-left: 14.2pt; margin-right: 0cm; margin-top: 0cm; margin-bottom: 6.0pt"> <span lang="EN-US" style="font-family: Symbol"><font size="2">·</font></span><span style="font-style: normal; font-variant: normal; font-weight: normal; font-family: Times New Roman" lang="EN-US"><font size="2">      </font></span><span lang="EN-US" style="font-family: Arial"><font size="2"> Dielectric layers</font></span></p> <p class="MsoNormal" style="text-indent: -14.2pt; margin-left: 14.2pt; margin-right: 0cm; margin-top: 0cm; margin-bottom: 6.0pt"> <span lang="EN-US" style="font-family: Symbol"><font size="2">·</font></span><span style="font-style: normal; font-variant: normal; font-weight: normal; font-family: Times New Roman" lang="EN-US"><font size="2">      </font></span><span lang="EN-US" style="font-family: Arial"><font size="2"> Thin film transistors</font></span></p> <p class="MsoNormal" style="text-indent: -14.2pt; margin-left: 14.2pt; margin-right: 0cm; margin-top: 0cm; margin-bottom: 6.0pt"> <span lang="EN-US" style="font-family: Symbol"><font size="2">·</font></span><span style="font-style: normal; font-variant: normal; font-weight: normal; font-family: Times New Roman" lang="EN-US"><font size="2">      </font></span><span lang="EN-US" style="font-family: Arial"><font size="2"> Chemical resistant layers</font></span></p> <p class="MsoNormal" style="text-indent: -14.2pt; margin-left: 14.2pt; margin-right: 0cm; margin-top: 0cm; margin-bottom: 6.0pt"> <span lang="EN-US" style="font-family: Symbol"><font size="2">·</font></span><span style="font-style: normal; font-variant: normal; font-weight: normal; font-family: Times New Roman" lang="EN-US"><font size="2">      </font></span><span lang="EN-US" style="font-family: Arial"><font size="2"> Plasma etching</font></span></p> <p class="MsoNormal" style="text-indent: -14.2pt; margin-left: 14.2pt; margin-right: 0cm; margin-top: 0cm; margin-bottom: 6.0pt"> <span lang="EN-US" style="font-family: Symbol"><font size="2">·</font></span><span style="font-style: normal; font-variant: normal; font-weight: normal; font-family: Times New Roman" lang="EN-US"><font size="2">      </font></span><span lang="EN-US" style="font-family: Arial"><font size="2"> Plasma cleaning</font></span></p> <p> </p> <p class="MsoNormal" style="margin-top:0cm;margin-right:0cm;margin-bottom:3.0pt; margin-left:14.2pt;text-align:justify"> <span lang="EN-US" style="font-family: Arial"><font size="2">The </font> </span><font size="2"><b><span lang="EN-US" style="font-family: Arial"> PlasmaConsult</span></b></font><span lang="EN-US" style="font-family: Arial"><font size="2"> ICP-PECVD System consists of six main components:</font></span></p> <p class="MsoNormal" style="margin-top:0cm;margin-right:0cm;margin-bottom:3.0pt; margin-left:14.2pt;text-align:justify">  </p> <p class="MsoNormal" style="text-align: justify; text-indent: -14.2pt; margin-left: 14.2pt; margin-right: 0cm; margin-top: 0cm; margin-bottom: 3.0pt"> <span lang="EN-US" style="font-family: Symbol"><font size="2">·</font><span style="font-style: normal; font-variant: normal; font-weight: normal; font-family: Times New Roman"><font size="2">     </font></span></span><span lang="EN-US" style="font-family: Arial"><font size="2">ICP-P 200 plasma source with integrated rf matching unit mounted on a DN 250 ISO-K flange and a 1000 W 1310 RF (13.56 MHz) power generator.</font></span></p> <p class="MsoNormal" style="text-align: justify; text-indent: -14.2pt; margin-left: 14.2pt; margin-right: 0cm; margin-top: 0cm; margin-bottom: 3.0pt"> <span lang="EN-US" style="font-family: Symbol"><font size="2">·</font><span style="font-style: normal; font-variant: normal; font-weight: normal; font-family: Times New Roman"><font size="2">     </font></span></span><span lang="EN-US" style="font-family: Arial"><font size="2">heated substrate holder BSH 150 mounted on a DN 250 ISO-K flange an a digital PID temperature controller.</font></span></p> <p class="MsoNormal" style="text-align: justify; text-indent: -14.2pt; margin-left: 14.2pt; margin-right: 0cm; margin-top: 0cm; margin-bottom: 3.0pt"> <span lang="EN-US" style="font-family: Symbol"><font size="2">·</font><span style="font-style: normal; font-variant: normal; font-weight: normal; font-family: Times New Roman"><font size="2">     </font></span></span><span lang="EN-US" style="font-family: Arial"><font size="2">main vacuum chamber incl. gas rings for the monomer and working gas and a remote grid.</font></span></p> <p class="MsoNormal" style="text-align: justify; text-indent: -14.2pt; margin-left: 14.2pt; margin-right: 0cm; margin-top: 0cm; margin-bottom: 3.0pt"> <span lang="EN-US" style="font-family: Symbol"><font size="2">·</font><span style="font-style: normal; font-variant: normal; font-weight: normal; font-family: Times New Roman"><font size="2">     </font></span></span><span lang="EN-US" style="font-family: Arial"><font size="2">load lock system with a magnetically coupled transporter and a separate rotary vane pump and Pirani type pressure gauge.</font></span></p> <p class="MsoNormal" style="text-align: justify; text-indent: -14.2pt; margin-left: 14.2pt; margin-right: 0cm; margin-top: 0cm; margin-bottom: 3.0pt"> <span lang="EN-US" style="font-family: Symbol"><font size="2">·</font><span style="font-style: normal; font-variant: normal; font-weight: normal; font-family: Times New Roman"><font size="2">     </font></span></span><span lang="EN-US" style="font-family: Arial"><font size="2">pumping system consisting of a turbo molecular pump and two stage rotary vane pump as forevacuum pump.</font></span></p> <p class="MsoNormal" style="text-align: justify; text-indent: -14.2pt; margin-left: 14.2pt; margin-right: 0cm; margin-top: 0cm; margin-bottom: 3.0pt"> <span lang="EN-US" style="font-family: Symbol"><font size="2">·</font><span style="font-style: normal; font-variant: normal; font-weight: normal; font-family: Times New Roman"><font size="2">     </font></span></span><span lang="EN-US" style="font-family: Arial"><font size="2">gas distribution system incl. four mass flow controllers and read out unit.</font></span></p> <p> </p> <p><span class="highlight"><u><b> <font face="Arial" size="2" color="#111111">Technical data</font></b></u></span></p> <p><b><font face="Arial" size="2" color="#111111">ICP rf power range:</font></b><font face="Arial" size="2" color="#111111"><b>              </b>3 - 1000 W (cw)</font></p> <p><b><font face="Arial" size="2" color="#111111">ICP frequency:</font></b><font face="Arial" size="2" color="#111111"><b>               </b>       13.56 MHz</font></p> <p><font face="Arial" size="2" color="#111111"><b>ICP pressure range:               </b>0.25 -100 Pa</font></p> <p><b><font face="Arial" size="2" color="#111111">Temp. substrate holder</font></b><font face="Arial" size="2" color="#111111"><b>:        </b> max. 500°C </font></p> <p><b><font face="Arial" size="2" color="#111111">dc bias </font></b><font face="Arial" size="2" color="#111111"><b>substrate holder:      </b> max +/- 500 V  <b>        </b> </font></p> <p><font face="Arial" size="2" color="#111111"><b>max. wafer size:                    </b>6" <b>       </b></font></p> <p><b><font face="Arial" size="2" color="#111111">Base pressure:</font></b><font face="Arial" size="2" color="#111111"><b>                 </b>      <10<sup>-5</sup> mbar</font></p> <p> </td> <td width="50%"><b><font color="#111111" size="2" face="Arial">HCD-P 100</font></b><p><font face="Arial"><b> <span class="highlight"><font size="2">Features:</font></span><font size="2"> </font></b></font></p> <ul type="disc"> <li><font face="Arial"><span class="text"><font size="2">operation over an extended power and pressure range</font></span><font size="2"> </font></font> </li> <li><font face="Arial"><span class="text"><font size="2">no mode jumps</font></span><font size="2"> </font></font> </li> <li><font face="Arial"><span class="text"><font size="2">high plasma and radical species densities with excellent<br> radial homgeneity</font></span><font size="2"> </font></font> </li> <li><font face="Arial"><span class="text"><font size="2">compatible with chemical reactive and non-reactive gases</font></span><font size="2"> </font></font> </li> <li><font face="Arial"><span class="text"><font size="2">cw and pulsed power operation</font></span><font size="2"> </font></font> </li> <li><font face="Arial"><span class="text"><font size="2">low contamination</font></span><font size="2"> </font></font> </li> </ul> <p><font size="2" face="Arial"><br> <br> <b> <span class="highlight">Applications:</span></b><br> </font> <ul type="disc"> <li><font face="Arial"><span class="text"><font size="2">plasma-enhanced chemical vapor deposition (PE-CVD)</font></span><font size="2"> </font></font> </li> <li><font face="Arial"><span class="text"><font size="2">plasma polymerisation</font></span><font size="2"> </font></font> </li> <li><font face="Arial"><span class="text"><font size="2">surface modification</font></span><font size="2"> </font></font> </li> <li><font face="Arial"><span class="text"><font size="2">plasma cleaning</font></span><font size="2"> </font></font> </li> <li><font face="Arial"><span class="text"><font size="2">plasma etching</font></span><font size="2"> </font></font> </li> <li><font face="Arial"><span class="text"><font size="2">reactive and non-reactive ion etching</font></span><font size="2"> </font></font> </li> <li><font face="Arial"><span class="text"><font size="2">material science (in general)</font></span><font size="2"> </font></font> </li> </ul> <p><font face="Arial" size="2"><b><span class="highlight">Concept of the HCD-P100</span></b><br> </font></p> <p class="text"><font face="Arial" size="2">Hollow cathode discharges represent a relatively simple means for the efficient production of high density, low temperature plasmas. The plasma source HCD-P 100 employs the hollow cathode effect. Basically, the source consists of a hexagonal matrix of 48 hollow cathode discharges. The inner hollow cylinders are rf-powered enclosing the primary plasma; the outer part of the source is electrically grounded.<br> An hexagonal array of orifices is drilled into the housing and the hollow cylinders allowing plasma jets to be extracted after the primary plasma has been excited in the hollow cathode. A proprietary compact gas distribution system for the primary gas and the monomer gas featuring fractal geometry gas channels plus a proprietary internal cathode structure guaranties a homogenous jet formation over extended source dimensions.<br> The material used is all-aluminium important for a good thermal conductivity and reduced surface loss rates when working with radicals and excited species. Depending on the technological needs the whole system can be operated isothermally by adjusting the cooling/heating water-temperature.</font></p> <p class="text"> </p> <p><b><font face="Arial" size="2"><span class="highlight">Performance</span> </font></b> </p> <p class="text"><font face="Arial" size="2">There are two major parameters controlling the performance and technical applicability of hollow cathode plasma sources such as the HCD -P. These are the working pressure range of the hollow cathode (primary) discharge and the rf-power required for plasma breakdown, i.e. ignition. </font> <p class="text"> <p><font face="Arial"><b><span class="highlight"> <font size="2">Homogeneity Issues</font></span></b><font size="2"><br> </font></font></p> <p class="text"><font size="2" face="Arial">The achievable film homogeneity and quality in plasma polymerisation is controlled by the substrate distance to the monomer inlet and jet-orifices (primary plasma). Another important influence relates to the total gas flow patterns. Detailed experimental investigations have shown that a distance of about 60 mm between the plasma jet outlets and the substrate is a good compromise between the desired film homogeneity and achievable deposition rates.<br> As an example for a low-temperature PE-CVD process with the HCD-P DLC-deposition on a substrate has been performed. High quality DLC films were grown at room temperature with a film uniformity better than 4 % across a 4" Si-wafer (substrate bias at 400 V). In summary, the HCD-P yields excellent homogeneities in plasma-induced surface modifications/activations as well as in plasma polymerised thin films.</font></p> <p class="text"> </p> <p><font face="Arial"><b><span class="highlight"><font size="2">Contamination</font></span></b><font size="2"><br> </font></font> </p> <p class="text"><font size="2" face="Arial">It is commonly said that HCD's are prone to unwanted parasitic sputtering of the source electrodes. Due to its proprietary and patented excitation geometry PlasmaConsult's hollow cathode plasma sources HCD enclose the plasma completely with the exception of the plasma jet holes. Any possible contamination must have its origin in the inner cylinder or at the jet orifices.<br> <br> From the source geometry it is highly unlikely that contaminants (in this case aluminium) will leave the inner source and are deposited e.g. on a substrate.<br> <br> In fact, after two hours of operation (300 sccm Ar, 1 mbar, 400 W), the surface concentration of aluminium on a Si-wafer was found to be 0,25 % of the Si concentration only.</font></p> <p><font face="Arial"><b><span class="highlight"><font size="2">Lifetime</font></span></b></font></p> <p><font size="2" face="Arial"><br> The HCD-P is manufactured using exclusively aluminium and ceramic parts for electrical insulation. No quartz windows etc. are necessary. Since all ceramic parts are shielded from direct plasma interaction and sputtering the source is extremely robust and offers extended lifetimes often superior to those of inductively and microwave excited plasmas.</font></p> <p>  </p> <p>  </p> <p style="margin-top: 0"><u><b><font color="#111111" size="2" face="Arial"><span class="highlight"> Technical data</span></font></b></u></p> <p><b><font face="Arial" size="2" color="#111111">RF-Power</font></b><font class="text" color="#111111" size="2" face="Arial"><b>:                </b>1 - 700 W  13.56 MHz</font></p> <p><font color="#111111" size="2" face="Arial"><b>Mounting flanges:</b>    DN 250 ISO-K or larger, CF flange optionally </font></p> <p><b><font face="Arial" size="2" color="#111111">Cooling</font></b><font color="#111111" size="2" face="Arial"><b>:                   </b> water</font></p> <p><b><font face="Arial" size="2" color="#111111">P</font></b><font color="#111111" size="2" face="Arial"><b>ressure range:</b>       5 - 1000 Pa</font></p> <p><font color="#111111" size="2" face="Arial"><b>Gas flow rates:</b>         5 - 500 sccm (primary gas)</font></p> <p><font color="#111111" size="2" face="Arial">                                 4 - 100 sccm (monomer / precursor gas )</font></p> <p> </td> </tr> <tr> <td width="50%"><b><font face="Arial" size="2" color="#111111"> Magnetron Sputter Coating System MSC-3 </font></b> <p class="MsoNormal" style="margin-bottom:12.0pt"><b> <span lang="EN-US" style="font-family: Arial"><font size="2">Features</font></span></b></p> <ul> <li> <p class="MsoNormal" style="text-indent: -14.2pt; margin-left: 14.2pt; margin-right: 0cm; margin-top: 0cm; margin-bottom: 6.0pt"> <span lang="EN-US" style="font-family: Arial"><font size="2"> Up to 4 water cooled magnetron sputter sources</font></span></p> </li> <li> <p class="MsoNormal" style="text-indent: -14.2pt; margin-left: 14.2pt; margin-right: 0cm; margin-top: 0cm; margin-bottom: 6.0pt"> <span lang="EN-US" style="font-family: Arial"><font size="2"> Excellent thickness uniformity</font></span></p> </li> <li> <p class="MsoNormal" style="text-indent: -14.2pt; margin-left: 14.2pt"> <span lang="EN-US" style="font-family: Arial"><font size="2"> Compatible with chemically reactive and non reactive gases</font></span></p> </li> <li> <p class="MsoNormal" style="text-indent: -14.2pt; margin-left: 14.2pt"> <span lang="EN-US" style="font-family: Arial"> <font size="2">Rotateable and movable substrate holder</font></span></p> </li> </ul> <p class="MsoNormal" style="text-indent: -14.2pt; margin-left: 14.2pt"> <span lang="EN-US" style="font-family: Arial"> <font size="2">Custom design on request</font></span></p> <p> </p> <p class="MsoNormal" style="margin-bottom:12.0pt"><b> <span lang="EN-US" style="font-family: Arial"><font size="2">Applications</font></span></b></p> <ul> <li> <p class="MsoNormal" style="text-indent: -14.2pt; margin-left: 14.2pt; margin-right: 0cm; margin-top: 0cm; margin-bottom: 6.0pt"> <span lang="EN-US" style="font-family: Arial"><font size="2"> Optical coatings</font></span></p> </li> <li> <p class="MsoNormal" style="text-indent: -14.2pt; margin-left: 14.2pt; margin-right: 0cm; margin-top: 0cm; margin-bottom: 6.0pt"> <span lang="EN-US" style="font-family: Arial"><font size="2"> Scratch resistant films</font></span></p> </li> <li> <p class="MsoNormal" style="text-indent: -14.2pt; margin-left: 14.2pt; margin-right: 0cm; margin-top: 0cm; margin-bottom: 6.0pt"> <span lang="EN-US" style="font-family: Arial"><font size="2"> Transparent and conductive films</font></span></p> </li> <li> <p class="MsoNormal" style="text-indent: -14.2pt; margin-left: 14.2pt; margin-right: 0cm; margin-top: 0cm; margin-bottom: 6.0pt"> <span lang="EN-US" style="font-family: Arial"><font size="2"> Antireflective films</font></span></p> </li> <li> <p class="MsoNormal" style="text-indent: -14.2pt; margin-left: 14.2pt; margin-right: 0cm; margin-top: 0cm; margin-bottom: 6.0pt"> <span lang="EN-US" style="font-family: Arial"><font size="2"> Decorative films</font></span></p> </li> </ul> <p class="MsoNormal" style="margin-top:0cm;margin-right:0cm;margin-bottom:3.0pt; margin-left:14.2pt;text-align:justify">  </p> <p class="MsoNormal" style="margin-top:0cm;margin-right:0cm;margin-bottom:3.0pt; margin-left:14.2pt;text-align:justify"> <span lang="EN-US" style="font-family: Arial"><font size="2">The </font> </span><font size="2"><b><span lang="EN-US" style="font-family: Arial"> PlasmaConsult</span></b></font><span lang="EN-US" style="font-family: Arial"><font size="2"> Magnetron Sputter Coating System MSC-3 consists of five main components:</font></span></p> <ul> <li> <p class="MsoNormal" style="text-align: justify; text-indent: -14.2pt; margin-left: 14.2pt; margin-right: 0cm; margin-top: 0cm; margin-bottom: 3.0pt"> <font size="2"><span style="font-family: Arial">   </span> <span lang="EN-US" style="font-family: Arial">Up to four water cooled planar 3” <b>magnetron sputter sources</b> mounted on a DN 400 ISO-K flange and RF (13.56 MHz) or DC power</span><span style="font-family: Arial"> </span> <span lang="EN-US" style="font-family: Arial">generator</span></font></li> <li> <p class="MsoNormal" style="text-align: justify; text-indent: -14.2pt; margin-left: 14.2pt; margin-right: 0cm; margin-top: 0cm; margin-bottom: 3.0pt"> <span style="font-style: normal; font-variant: normal; font-weight: normal; font-family: Arial" lang="EN-US"> <font size="2">    </font></span><font size="2"><span lang="EN-US" style="font-family: Arial">The <b>main vacuum chamber</b> incl. access door and vacuum inlet for the working gases. The main vacuum chamber is equipped with vent</span><span style="font-family: Arial"> </span><span lang="EN-US" style="font-family: Arial">valve and two pressure gauges. </span> </font></li> <li> <p class="MsoNormal" style="text-align: justify; text-indent: -14.2pt; margin-left: 14.2pt; margin-right: 0cm; margin-top: 0cm; margin-bottom: 3.0pt"> <span style="font-style: normal; font-variant: normal; font-weight: normal; font-family: Arial" lang="EN-US"> <font size="2">    </font></span><span lang="EN-US" style="font-family: Arial"><font size="2">The <b>substrate holder</b> mounted on a DN ISO-K flange, movable and rotateable.</font></span></li> <li> <p class="MsoNormal" style="text-align: justify; text-indent: -14.2pt; margin-left: 14.2pt; margin-right: 0cm; margin-top: 0cm; margin-bottom: 3.0pt"> <font size="2" face="Arial"> </font><span style="font-style: normal; font-variant: normal; font-weight: normal; font-family: Arial" lang="EN-US"><font size="2">   </font></span><font size="2"><span style="font-family: Arial">t</span></font><span lang="EN-US" style="font-family: Arial"><font size="2">he <b>pumping system</b> consisting of a turbo molecular pump and a two stage rotary vane pump as forevacuum pump. </font></span></li> <li> <p class="MsoNormal" style="text-align: justify; text-indent: -14.2pt; margin-left: 14.2pt; margin-right: 0cm; margin-top: 0cm; margin-bottom: 3.0pt"> <font size="2"> <span style="font-style: normal; font-variant: normal; font-weight: normal; font-family: Arial"> </span><span style="font-style: normal; font-variant: normal; font-weight: normal; font-family: Arial" lang="EN-US">   </span></font><span lang="EN-US" style="font-family: Arial"><font size="2">The <b>gas distribution</b> system incl. two mass flow controllers and electronic control unit</font></span></li> </ul> <p> </p> <p> </p> <p><span class="highlight"><u><b> <font face="Arial" size="2" color="#111111">Technical data</font></b></u></span></p> <p><span class="highlight"><font face="Arial" size="2" color="#111111"> Magnetron sputter sources</font></span></p> <p><b><font face="Arial" size="2" color="#111111">Max. power (DC)</font></b><font face="Arial" size="2" color="#111111"><b>                  </b>1.250 W</font></p> <p><b><font face="Arial" size="2" color="#111111">Max. power (RF)</font></b><font face="Arial" size="2" color="#111111"><b>             </b>      750 W</font></p> <p><b><font face="Arial" size="2" color="#111111">Pressure range</font></b><font face="Arial" size="2" color="#111111"><b>:                     </b>3 x 10<sup>-3</sup> - 10<sup>-1 </sup>mbar</font></p> <p><font face="Arial" size="2" color="#111111"><b>Max. target size                     </b> 3"</font></p> <p><font face="Arial" size="2" color="#111111"><b>max. substrate size                </b>4" <b>            </b></font></p> <p><b><font face="Arial" size="2" color="#111111">Base pressure:</font></b><font face="Arial" size="2" color="#111111"><b>                 </b>       <10<sup>-5</sup> mbar</font></p> <p> </td> <td width="50%"> <p><b><font color="#CC0099" face="Arial" size="2"> <a target="Inhalt" style="text-decoration: none" href="englische-page/ProduktemicrosSLAN.html"> <font color="#111111">µ-SLAN</font></a></font></b></p> <p> <font class="ueberschriftleft" color="#111111" size="2" face="Arial">2.45 GHz </font><font face="Arial" size="2" color="#111111">microwave plasma source</font></p> <p><b><font face="Arial"> <font class="highlight"><font size="2">Features:</font></font><font size="2"><br> </font></font></b></p> <ul type="disc"> <li><font class="text" size="2" face="Arial">high plasma and radical densities </font></li> <li><font class="text" size="2" face="Arial">compatible with chemically reactive and nonreactive gases </font></li> <li><font class="text" size="2" face="Arial">low contamination </font></li> <li><font class="text" size="2" face="Arial">ECR operation optionally</font></li> <li><font class="text" size="2" face="Arial">cw and pulsed operation </font></li> </ul> <p><font size="2" face="Arial"><br> <b> <font class="highlight">Applications:</font></b><br> </font> <ul type="disc"> <li class="text"><font class="text" size="2" face="Arial">plasma-enhanced chemical vapor deposition (PE-CVD) </font></li> <li class="text"><font class="text" size="2" face="Arial">surface modification </font></li> <li class="text"><font class="text" size="2" face="Arial">plasma cleaning </font></li> <li class="text"><font class="text" size="2" face="Arial">plasma etching </font></li> <li class="text"><font class="text" size="2" face="Arial">reaktive and non-reactive ion etching </font></li> <li class="text"><font class="text" size="2" face="Arial">basic reasearch in the material sciences </font></li> </ul> <p> <p><font face="Arial"><b><font class="highlight"><font size="2">Working principle:</font></font></b></font><p> <font face="Arial"> <font class="text"><font size="2">The SLAN basically consists of an annular wave guide (ring resonator) with slot antennas positioned at regular intervals on the innner side feeding microwave energy into the plasma. A magnetron which generates microwave power of 2.45 GHz frequency couples to the SLAN via R 26 wave guide. Between the generator and the plasma load a three port circulator directs the reflected power from the plasma into a water cooled dummy load to protect the magnetron from possible damage. The microwaves are coupled by a moveable antenna into the annular ring. Because of the highly nonlinear plasma impedance the active antenna length as well as the plunger position can be adjusted for minimum reflected power. A three stub tuner is not necessary. By changing the antenna and plunger position virtually any plasma load for an extended power and pressure range can be handled for atomic and molecular gases. Necessary calculations and simulations for construction were done using the software package MAFIA from <a href="http://www.cst.de" target="_blank">Computer Simulation Technology (CST GmbH)</a>.</font></font></font><p> <font face="Arial"><b><font class="highlight"><font size="2">Electron cyclotron resonance (ECR)</font></font></b><font size="2"><br> </font> <font class="text"><font size="2">A permanent 875 G SmCo-magnet assembly can be inserted into the SLAN to increase dramatically the power absorption in the lower pressure range at around 10<sup>-4</sup> to 10<sup>-2</sup> mbar. Ionization ratios of several percent (depending on the gas used) thereby yielding maximum ion concentrations of the order of 10<sup>-11</sup> cm<sup>-3</sup> are typical. At the same time the electron temperature increases with decreasing pressure approaching several eV. </font> </font></font></p> <p><font face="Arial"><b><font class="highlight"><font size="2">Surface wave generation</font></font></b><font size="2"><br> <font class="text">The </font> </font> </font> <font size="2"> <font class="text"><font face="Symbol">m</font><font face="Arial">SLAN generates axial surface waves at higher power levels (with argon in excess of 1 kW cw, with molecular gases higher power levels are necessary). Perequisite is that the plasma is overdense which is easily achieved for Ar. When operating in this mode the plasma volume increases with increasing power providing interesting options for advanced materials processing. </font> </font> </font> <p style="margin-bottom: 0"> </p> <p style="margin-bottom: 0"> </p> <p style="margin-top: 0"><u><b><font face="Arial" size="2" color="#111111"> Technical data:</font></b></u></p> <p style="margin-top: 0"><font color="#111111" size="2" face="Arial">                              <font class="highlight">  <b>            </b></font> <b>µSLAN          SLAN I           SLAN II </b></font></p> <p><font color="#111111" size="2" face="Arial"><b>Plasma diameter    </b>             4 cm              16 cm             67 cm</font></p> <p><font color="#111111" size="2" face="Arial"><b>max. mw power:               </b>1,2 kW             2 kW               6 kW</font></p> <p><b><font face="Arial" size="2" color="#111111">working range</font></b><font color="#111111" size="2" face="Arial"><b>                           </b></font></p> <p><font color="#111111" size="2" face="Arial"><b>    with ECR (mbar)</b>            10<sup>-4</sup> - 50<sup>             </sup>10<sup>-4</sup> - 10<sup> <b>            </b> </sup>N/A<b><sup> </sup></b>                                                                                   </font></p> <p><font color="#111111" size="2" face="Arial"><b>    without ECR                  </b>10<sup>-2</sup> - 50          10<sup>-2</sup> - 10          10<sup>-2  </sup>- 2       </font></p> <p><b><font face="Arial" size="2" color="#111111">pulsable</font></b><font color="#111111" size="2" face="Arial"><b> </b>                              yes                 yes                 yes</font></p>  </td> </tr> </table> </body>