Please find below more information about plasma processes performed with JE PlasmaConsult equipment. The information is sorted by application or product. If you have further questions about the featured application or technical notes please feel free to contact us.

Information sorted by application:

• DLC removal with 13.56 MHz ICP-P 200 plasma source
• Etching of SiO and SiO₂

• Pulsed PECVD deposition of DLC
• Thin film electrolyte coating
• SiO_x Beschichtung in einer Plasma-Wirbelschicht
• Low temperature fabrication of Si-films
• DLC deposition by a 13.56 MHz hollow cathode system
• Hollow cathode module for plasma aided materials processing and synthesis
• Scratch resistant plastic lens coating
• PECVD of thin Al₂O₃ films on powders in an circulating fluidized bed
• DLC deposition with a free standing micro wave plasma beam
• Remote deposition of scratch resistant films
• Multi jet hollow cathode discharge for remote polymer deposition
• SiO_x thin film deposition using a hollow cathode source
• ECR SLAN source for ion implantation
• Morphology of polystrene films deposited by RF plasma

• Large area lubricant removal
• Plasma sterilization

• Rapid surface modification of PE
• Surface modification of fluorpolymers

Plasma Sources

• Technical note 13.56 MHz hollow cathode plasma source HCD-P 100
• Thin film electrolyte coating

• Deposition of diamond-like carbon films by a hollow cathode multi-jet rf plasma system

• Characterizing the remote plasma polymerization of octafluorocyclobutane induced by RF-driven hollow-cathode discharge

• Technical note 13.56 MHz Hollow Cathode Plasma Source HCD-L 300

• Hollow Cathode Discharge - module for plasma aided materials processing and synthesis (1)

• Hollow Cathode Discharge - module for plasma aided materials processing and synthesis (2)

• Contamination by the HCD-L 300

• Multi-jet hollow cathode discharge for remote polymer deposition

• SiO_x thin film deposition using a hollow cathode source

• Technical note 13.56 MHz Inductively Coupled Plasma Source ICP-P 200
• DLC removal with ICP-P 200
• Etching of SiO and SiO₂
• Morphology of polystrene films deposited by RF plasma

• Technical note Slot Antenna plasma source SLAN
• SiO_x Beschichtung in einer Plasma-Wirbelschicht
• Low temperature fabrication of Si-films
• Scratch resistant plastic lens coating
• Large area lubricant removal

• Remote deposition of scratch resistant films by use of slot antenna microwave plasma source

• ECR SLAN source for ion implantation

• Rapid surface modification of PE

• Surface modification of fluorpolymers

• Deposition of SiNx thin film using μ-SLAN surface wave plasma source

• Plasma parameters of an oxygen microwave discharge obtained by probe diagnostics

• PECVD of thin Al₂O₃ films on powders in an circulating fluidized bed

• DLC deposition with a free standing micro wave plasma beam

• Technical note water cooled movable RF substrate holder

Plasma Diagnostic

• General information about L2P
• Characterization of a micro wave plasma by in situ diagnostics
• Plasma parameters of an oxygen microwave discharge

• Technical note MWI 2650
• Non invasive measurement of electron density
• Electron release in the afterglow of a pulsed icp oxygen plasma
• Measurement of the electron density of a cold atmospheric plasma jet

Plasma Systems

• Technical note Plascon HCD plasma system
• Pulsed PECVD deposition of DLC
• DLC deposition by a 13.56 MHz hollow cathode system

• Technical note ICP-PECVD plasma system