ICP- PECVD
The ICP PECVD System is suited for high quality deposition of dielectric thin films at low temperatures as well as deposition of DLC-layers. The heated substrate holder carries substrates up to 6".
Features
· ICP plasma source with high plasma and radical densities
· Excellent thickness uniformity
· Compatible with chemically reactive and non reactive gases
· Low electron temperature
· Custom design on request
Applications
· Scratch resistant transparent coatings
· Photosensitive and electronically active layers
· Dielectric layers
· Thin film transistors
· Chemical resistant layers
· Plasma etching
· Plasma cleaning
The PlasmaConsult ICP-PECVD System consists of six main components:
· ICP-P 200 plasma source with integrated rf matching unit mounted on a DN 250 ISO-K flange and a 1000 W 1310 RF (13.56 MHz) power generator.
· heated substrate holder BSH 150 mounted on a DN 250 ISO-K flange an a digital PID temperature controller.
· main vacuum chamber incl. gas rings for the monomer and working gas and a remote grid.
· load lock system with a magnetically coupled transporter and a separate rotary vane pump and Pirani type pressure gauge.
· pumping system consisting of a turbo molecular pump and two stage rotary vane pump as forevacuum pump.
· gas distribution system incl. four mass flow controllers and read out unit.
Technical data
ICP rf power range: 3 - 1000 W (cw)
ICP frequency: 13.56 MHz
ICP pressure range: 0.25 -100 Pa
Temp. substrate holder: max. 500°C
dc bias substrate holder: max +/- 500 V
max. wafer size: 6"
Base pressure: <10-5 mbar
Application note: