The HCD-L 300 is a 13.56 MHz hollow cathode plasma source which uses a very effective and yet comparatively simple, low cost effective means of high density, low temperature plasma generation. Due to its modularity, the HCD-L 300 can easily be upscaled. Learn more about applications using the HCD-L 300 in our Tech library.

Equal to the HCD-L 300 the HCD-P 100 is a hollow cathode plasma source which uses a very effective and yet comparatively simple, low cost effective means of high density, low temperature plasma generation. Instead of a linear arrangement of jets (HCD-L 300) this source uses a planar arrangement for plasma generation. Learn more about applications using the HCD-P 100 in our Tech library.

The ICP-P 200 is an 13.56 MHz inductively coupled, i.e. electrodeless plasma source which produces high plasma and radical densities. The source can be operated in a cw and in a pulsed mode over a wide parameter range. Learn more about applications using the ICP-P 200 in our Tech library.

The SLAN I DS is part of our microwave plasma source family. This source is characterized by a very high plasma density, so that it is suited for very demanding applications. Learn more about applications using the SLAN I DS in our Tech library.

The µSLAN is part of our microwave plasma source family, too. The special feature of this source is its compact design. This source is characterized by a very high plasma density, so that it is suited for very demanding applications. Learn more about applications using the µSLAN in our Tech library.

Please click on the pictures for more information or call our specialist:

Dr. Axel Schwabedissen: +49 202 -28397-121

If you need further information about our product range please click here